Class Central is learner-supported. When you buy through links on our site, we may earn an affiliate commission.

NPTEL

High Speed Devices and Circuit

NPTEL and Indian Institute of Technology Madras via YouTube

Overview

Save Big on Coursera Plus. 7,000+ courses at $160 off. Limited Time Only!

This course discusses topics: important parameters governing the high-speed performance of devices and circuits; silicon-based MOSFET and BJT circuits for high-speed operation and their limitations; materials for high-speed devices and circuits; metal-semiconductor contacts and Metal Insulator Semiconductor and MOS devices; Metal Semiconductor Field Effect Transistors (MESFETs); High Electron Mobility Transistors (HEMT); Heterojunction Bipolar Transistors (HBTs); high-speed Circuits; and high-frequency resonant-tunneling devices.

Syllabus

Lecture 1 - Introduction to Basic Concepts.
Lecture 2-Requirements of High Speed Devices, Circuits & Mat.
Lecture-3-Classifications & Properties of Compound Semicond.
Lecture4-Temary Compound Semiconductor and their Application.
Lecture5-Temary Compound Semiconductor and their Appl - 2.
Lecture 6 - Crystal Structures in GaAs.
Lecture 7 - Dopants and impurities in GaAs and InP.
Lecture 8- Brief Overview of GaAs Technology for High Speed.
Lecture 9 - Epitaxial Techniques for GaAs High Speed Devices.
Lecture 10 - MBE and LPE for GaAs Epitaxy.
Lecture 11 - GaAs and InP Devices for Microelectronics.
Lecture 12 - Metal Semiconductor contacts for MESFET.
Lecture13- Metal Semiconductor contacts for MESFET (Contd.).
Lecture14- Metal Semiconductor contacts for MESFET (Contd.).
Lecture 15 - Ohmic Contacts on Semiconductors.
Lecture 16 - Fermi Level Pinning & Schottky Barrier Diodes.
Lecture 17 - Schottky Barrier Diode.
Lecture 18 - Schottky Barrier Diodes.
Lecture 19 -Causes of Non-Idealities-Schottky Barrier Diodes.
Lecture 20 - MESFET Operation & I-V Characteristics.
Lecture 21 - MESFET I-V Characteristics Shockley's Model.
Lecture 22 - MESFET Shockley's Model and Velocity saturation.
Lecture 23- MESFET Velocity Saturation effect.
Lecture 24 -MESFET Drain Current Saturation.
Lecture 25 - MESFET : Effects of channel length and gate length on IDS and gm.
Lecture 26 - MESFET: Effects of Velocity Saturation.
Lecture 27 - Velocity Field Characteristics.
Lecture-28-MESFET-SAINT.
Lecture-29-SELF Aligned MESFET-SAINT.
Lecture-30-Hetero Junctions.
Lecture-31-Hetero Junctions&HEMT.
Lecture-32-Hetero Junctions&HEMT(Contd).
Lecture-33-High Electron Mobility Transistor.
Lecture-34-HEMT-off Voltage.
Lecture-35-HEMT 1-V Characteristics and Transconductance.
Lecture-36-Indium Phosphide Based HEMT.
Lecture-37-Pseudomorphic HEMT.
Lecture-38-Hetrojunction Bipolar Transistors(HBT).
Lecture-39-Hetrojunction Bipolar Transistors(HBT)-2(Contd).
Lecture-40-Hetrojunction Bipolar Transistors(HBT)-3(Contd).
Lecture-41-Hetrojunction Bipolar Transistors(HBT)-4(Contd).

Taught by

nptelhrd

Tags

Reviews

Start your review of High Speed Devices and Circuit

Never Stop Learning.

Get personalized course recommendations, track subjects and courses with reminders, and more.

Someone learning on their laptop while sitting on the floor.