Basics of Semiconductor Microwave Devices

Overview

ABOUT THE COURSE: This course will deal with semiconductor devices including diodes and transistors which are used in microwave and RF applications, especially for power amplifiers. Although several excellent courses exist on microwave theory/techniques and on RF circuit design, yet, the RF transistor is often treated as a black-box. With the fast emergence of 5G/wi-fi, advanced cellular platforms and strategic radar systems, III-V FETs and GaN HEMTs are being increasingly adopted. So, this course will seek to give a basic background of such devices in addition to conventional silicon LDMOS and bipolar devices. Toward the end, this course will also try to introduce basic microwave concepts from the device point-of-view. INTENDED AUDIENCE: Undergrads, post-graduates, PhD scholars, Industry personnelPREREQUISITES: Taking/doing a basic course on semiconductor devices is a pre-requisite for this course.INDUSTRY SUPPORT: N/A Any course on RF/microwave devices, companies on device development.

Syllabus

Week 1: Introduction to the course: perspective & historical overview, Applications of various RF devices today
Week 2:Basics of heterojunctions and heterostructure physics, Basics of III-nitrides and polarization Schottky multipliers & varactors
Week 3:Transferred Electron Devices: Gunn Diode, Avalanche Transit Devices: IMPATT
Week 4:III-V MESFET: physics and transport, I-V, load line, transconductance, fabrication. Intro to JFOM.
Week 5:III-V HEMT/MODFET – physics, modulation doping & the formation of 2DEG, breakdown, gain, traps, dispersion.
Week 6:p-HEMT, recess gate, field-plate, power cell, multi-finger devices, fabrication.
Week 7:GaN HEMTs – benefits of WBG, various aspects of GaN RF HEMT such as substrate, processing, dispersion & virtual gate, leakage, stack design, compensation doping
Week 8:Basics of RF CMOS;LDMOS – device physics, transport, breakdown, On resistance, snapback.
Week 9:LDMOS - layout & design, bond pad manifold, frequency aspects, the concept of RESURF.
Week 10:Bipolar devices for RF: working of HBT, Early Effect, Kirk Effect, Gain, Common Emitter & Common Base mode, small-signal model.
Week 11:Bipolar devices: base design, collector design, emitter ballast, SiGe bipolar, FET vs bipolar for RF, fabrication
Week 12:Microwave concepts for devices and packaging: S-parameters & 2-port analysis, concept of impedance, Intro to Smith chart, de-embedding parasitics, derivation of cut-off frequencies and MAG/MSG, Transmission lines & waveguides, concept of impedance matching, Basics of RF device packaging and thermal management