COURSE OUTLINE: This course seeks to cover the basics of semiconductor devices including the physics of energy bands, doping and carrier statistics and transport leading up to the understanding of common semiconductor devices including p-n junctions and their applications, BJTs and MOSFETs. The course will also give a flavour of the basics of compound semiconductors and their devices, and also touch base with opto-electronic devices such as solar cells, photodetectors and LEDs. The course will ensure that undergraduates, college teachers and other interested audience with no background in semiconductors are able to grasp the content. In parallel, the course will consistently seek to engage the audience by giving real-life examples pertaining to the content, and also seek to calibrate the content with respect to practical and commercial technologies which are all around us and which use semiconductor devices. There will be enough food for thought even for advanced learners such as PhD students and active researchers.
Overview
Syllabus
DigbijoyIntro.
Introduction to semiconductors.
Introduction to energy bands.
Fundamentals of band structure.
Band structure (contd.) and Fermi-Dirac distribution.
Density of states.
Doping and intrinsic carrier concentration.
Equilibrium carrier concentration.
Temperature-dependence of carrier concentration.
High doping effects and incomplete ionization.
Carrier scattering and mobility.
Low-field and high-field transport, introduction to diffusion.
Drift-diffusion and trap statistics.
Current continuity equation.
Continuity equation (contd.) and introduction to p-n junction.
Application of p-n junctions.
Breakdown of junction and C-V profiling.
p-n junction under equilibrium.
p-n junction under equilibrium (contd.).
p-n junction under bias.
p-n junction under bias (contd.).
p-n junction: generation-recombination currents.
Introduction to Schottky junction.
Schottky junction under equilibrium.
Schottky junction under bias.
Introduction to transistors: BJT.
Basics of BJT.
Working of BJT.
Working of BJT (contd).
Delays in BJT.
MOS: Introduction.
MOS: Capacitance-voltage.
Ideal MOS system: derivation of threshold voltage.
MOS C-V in more details.
MOSFET – An introduction.
Gradual Channel Approximation: Derivation of I-V characteristics.
Substrate bias effect and subthreshold conduction in MOSFET.
Short Channel Effects in MOSFET.
Introduction to compound semiconductors.
Basics of heterojunctions.
Band diagram of heterojunctions.
Heterojunctions (contd)..
Heterojunction transistors.
III-nitrides.
mod10lec44.
mod10lec45.
mod10lec46.
mod10lec47.
mod10lec48.
mod10lec49.
mod11lec50.
mod11lec51.
mod11lec52.
mod11lec53.
mod12lec54.
mod12lec55.
mod12lec56.
mod12lec57.
mod12lec58.
mod12lec59.
Taught by
IISc Bangalore July 2018
