Overview

Instructors: Prof. Navakanta Bhat, Prof. S. A. Shivashankar and Prof. K. N. Bhat, Centre for Nano Science and Engineering, IIT Bangalore.

The objective of this course is to present the state of the art in the areas of semiconductor device physics and materials technology to enable Nanoelectronics. The fundamentals of classical CMOS technology will be discussed and the issue in scaling MOSFET in the sub-100 nm regime will be elaborated. In this context, the need for non-classical transistors with new device structure and nanomaterials will be elucidated. The issues in realizing Germanium and compound semiconductor MOSFET will be presented. Extensive materials characterization techniques will also be discussed, which help in engineering high-performance transistors.

Syllabus

Introduction to Nanoelectronics.
CMOS Scaling Theory.
Short Channel Effects.
Subthreshold Conduction.
Drain Induced Barrier Lowering.
Channel and Source/Drain Engineering.
CMOS Process Flow.
Gate oxide scaling and reliability.
High-k gate dielectrics.
Metal gate transistor.
Industrial CMOS Technology.
Ideal MOS C-V Characteristics.
Effect of non idealities on C-V.
MOS Parameter Extraction from C-V Characteristics.
MOS Parameter Extraction from I-V Characteristics.
MOSFET Analysis, sub-threshold swing “S”.
Interface state density effects on “S”. Short Channel Effects (SCE) and Drain Induced Barrier Loweri.
Velocity Saturation, Ballistic transport, and Velocity Overshoot Effects and Injection Velocity.
SOI Technology and comparisons with Bulk Silicon CMOS technology.
SOI MOSFET structures, Partially Depleted (PD)and Fully Depleted (FD) SOIMOSFETs.
FD SOI MOSFET: Operation Modes and Threshold Voltages and Electric Fields.
Sub-threshold Slope & SCE suppression in FD SOI MOSFET, Volume Inversion and Ultra thin (UTFD) SOI M.
Need for MS contact Source/Drain Junction in Nano scale MOSFETs.
Rectifying and Ohmic contacts and challenges in MS unction source drain MOSFET Technology.
Effect of Interface states and Fermi level pinning on MS contacts on Si and passivation techniques f.
Germanium as an alternate to silicon for high performance MOSFETs and the challenges in Germanium Te.
Germanium MOSFT technology and recent results on surface passivated Ge MOSFETS.
Compound semiconductors and hetero junction FETsfor high performance.
GaAs MESFETs: Enhancement and depletion types . Velocity Overshoot effcts in GaAs MESFETs.
Hetero-junctions and High Electron Mobility Transistors (HEMT).
Introduction to Nanomaterials.
Electronics Nanoelectronics Devices and Materials mod10lec32.
Electronics Nanoelectronics Devices and Materials mod10lec33.
Electronics Nanoelectronics Devices and Materials mod10lec34.
Electronics Nanoelectronics Devices and Materials mod10lec35.
Electronics Nanoelectronics Devices and Materials mod11lec36.
Electronics Nanoelectronics Devices and Materials mod11lec37.
Electronics Nanoelectronics Devices and Materials mod11lec38.
Electronics Nanoelectronics Devices and Materials mod12lec39.
Electronics Nanoelectronics Devices and Materials mod12lec40.
Electronics Nanoelectronics Devices and Materials mod13lec41.