Semiconductor physics is the professional courses of electronic science and technology and microelectronics science and engineering. The textbook is <Semiconductor physics and devices> edited by Neamen. This course emphasizes the basic concepts and phenomena of semiconductor physics, so that students can easily understand the essence of physics. It also focuses on the combination of theory and practical application, providing a way to quickly learn and understand the basic knowledge of semiconductor. It also provides help for students in the choice of professional direction. The first part is the basic knowledge and properties of semiconductors including introduction, basic concept of crystal (1st chapter), principles of quantum mechanics (2nd chapter), band theory of semiconductors (3rd chapter), The semiconductor in equilibrium (4th chapter), Carrier transport phenomena (5th chapter), Nonequilibrium excess carriers in semiconductors (6th chapter). The second part is two terminal devices including pn junction (7th chapter), pn junction diode (8th chapter), Metal–semiconductor and semiconductor heterojunctions (9th chapter). The third part is three terminal devices including MOSFET (10th chapter), MOSFET：additional concept (11th chapter), Bipolar transistor (12th chapter), Junction FET (13th chapter), Power semiconductor device (14th chapter).
Overview
Syllabus
- Introduction 绪论
- The definition and application of semiconductor 半导体定义及其应用
- The history of semiconductors 半导体发展历史
- Chapter 1 Basic Concepts in Crystals 晶体基本概念
- 1.1 Classification of solids 固体分类
- 1.2 Defects and Impurities 缺陷和杂质
- 1.3 Growth Methods of Semiconductor Materials 半导体材料生长方法
- Chapter 2 Principles of Quantum Mechanics 量子力学初步
- 2.1 Energy quanta 能量量子
- 2.2 Schrodinger’s Wave Equation 薛定谔波动方程
- 2.3 Applications of Schrodinger’s wave equation 薛定谔波动方程的应用
- 2.4 Extensions of the Wave Theory to Atoms 源自波动理论的延伸
- Chapter 3 Energy band theory of solids 固体能带论
- 3.1 Allowed and Forbidden Energy Bands 允带和禁带
- 3.2 Electrical Conduction in Solids 固体中电的传导
- 3.3 Extension to Three Dimensions 三维扩展
- 3.4 Density of States Function 态密度函数
- 3.5 Statistical Mechanics 统计力学
- Chapter 4 The Semiconductor in Equilibrium 平衡半导体
- 4.1 Charge Carriers in Semiconductors 半导体中的载流子
- 4.2 Dopant Atoms and Energy Levels 掺杂原子和能级
- 4.3 The Extrinsic Semiconductor 非本征半导体
- 4.4 Statistics of Donors and Acceptors 施主和受主的统计学分布
- 4.5 Charge Neutrality 电中性态
- 4.6 Position of Fermi Level 费米能级位置
- Chapter 5 Carrier Transport Phenomena 载流子输运现象
- 5.1 Carrier Drift 载流子漂移
- 5.2 Carrier Diffusion 载流子扩散
- 5.3 Graded Impurity Distribution 杂质梯度分布
- 5.4 Hall Effect 霍尔效应
- Chapter 6 Nonequilibrium Excess Carriers in Semiconductors 半导体中的非平衡过剩载流子
- 6.1 Carrier Generation and Recombination 载流子的产生与复合
- 6.2 Characteristics of Excess Carriers 过剩载流子的性质
- 6.3 Ambipolar Transport 双极输运
- 6.4 Quasi-Fermi Levels & Lifetime of Excess Carriers 准费米能级及过剩载流子寿命
- 6.5 Surface Effects 表面效应
- Chapter 7 The pn Junction pn 结
- 7.1 The basic structure of pn junction pn结基本结构
- 7.2 Zero Applied Bias 零偏压
- 7.3 Reverse Applied Bias 反偏压
- Chapter 8 The pn Junction Diode pn结二极管
- 8.1 pn Junction Current pn结电流
- 8.2 Generation and Recombination Currents 产生-复合电流
- 8.3 Small Signal Model of pn Junction pn结小信号模型
- 8.4 Several special pn junction diodes 特殊pn结二极管
- 8.5 Optical Absorption 光吸收
- 8.6 Solar Cell 太阳能电池
- 8.7 Photodetector 光电探测器
- 8.8 Light Emitting Diode (LED) 发光二极管
- Chapter 9 Metal–Semiconductor and Semiconductor Heterojunctions 金属-半导体和异质结
- 9.1 Schottky Barrier Diode 肖特基势垒二极管
- 9.2 Metal-Semiconductor Ohmic Contacts 金半欧姆接触
- 9.3 Heterojunctions 异质结
- Chapter 10 Metal–Oxide– Semiconductor Field-Effect Transistor 场效应晶体管
- 10.1 Introduction 简介
- 10.2 MOS Energy band diagram and depletion layer thickness MOS能带图和耗尽层厚度
- 10.3 MOS work function difference and flatband voltage MOS功函数差和平带电压
- 10.4 MOS threshold voltage and charge distribution MOS阈值电压和电荷分布
- 10.5 Ideal C-V characteristics 理想CV特性
- 10.6 Three effects on C-V characteristics CV特性的三个效应
- 10.7 MOSFET basics and I-V characteristics 场效应晶体管的IV特性
- 10.8 MOSFET transconduction and substrate bias effect 跨导和衬底偏置效应
- 10.9 Frequency Limitations 频率限制特性
- 10.10 CMOS Technology CMOS技术
- Chapter 11 Metal–Oxide–Semiconductor Field-Effect Transistor: Additional Concepts 场效应晶体管补充
- 11.1 Nonideal Effects Sub-threshold conduction 亚阈值电导
- 11.2 Channel length modulation 沟道长度调制
- 11.3 Mobility variation 迁移率变化
- 11.4 velocity saturation and ballistic transport 速度饱和和弹道输运
- 11.5 MOSFET Scaling 按比例缩小
- 11.6 Threshold Voltage Modifications 阈值电压修正
- 11.7 Voltage breakdown mechanisms 击穿电压机理
- 11.8 Threshold adjustment ion implantation 离子注入调整阈值电压
- Chapter 12 The Bipolar Transistor 双极晶体管
- 12.1 BJT basic operation principle 基本工作原理
- 12.2 BJT simplified current relation 简化电流关系
- 12.3 BJT operation modes and amplification with BJT 工作模式
- 12.4 Minority Carrier Distribution Forward active region 少子分布和正向有源
- 12.5 Minority Carrier Distribution other operation modes 少子分布与其它工作模式
- 12.6 Current gain contribution factors 电流增益
- 12.7 Derivation of current components and current gain factors 电流成分和增益的推导
- 12.8 Non ideal effects 非理想效应1
- 12.9 Non ideal effects 非理想效应2
- 12.10 Equivalent Circuit Models 等效电路模型
- 12.11 Frequency Limitation 频率限制
- 12.12 Large Signal Switching 大信号开关
- Chapter13 The Junction Field-Effect Transistor 结型场效应晶体管
- 13.1 pn JFET basic operation mechanism pn JFET基本工作原理1
- 13.2 pn JFET basic operation mechanism pn JFET基本工作原理2
- 13.3 MESFET Operation MESFET 工作原理
- 13.4 HEMT 高电子迁移率晶体管
- Chapter 14 Semiconductor Power Devices 半导体功率器件
- 14.1 Power Diodes 功率二极管
- 14.2 Power Bipolar Transistors 功率双极晶体管
- 14.3 Power MOSFETs 功率场效应晶体管
- 14.4 The Thyristor 晶闸管
- Final exam
- Final exam
Taught by
Youlong Xu, Gang Niu, Zhi Yang, Wei Ren, Jinyan Zhao, and Yuan Zhang
