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Introduction to Auger-Meitner recombination
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Advancing the State of the Art in Semiconductor Technology Through Predictive Atomistic Calculations - Lecture 35
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- 1 35TH DISTINGUISHED LECTURE
- 2 Semiconductors: a timeless problem for electron
- 3 Semiconductors: a timeless problem for energy
- 4 Semiconductors: a timely problem
- 5 Quantum processes in semiconductor devices
- 6 Workflow for phonon-mediated quantum process
- 7 Overview
- 8 Need for phonon-assisted optics
- 9 Quantum theory of optical absorption
- 10 Challenge: interpolation over Brillouin zone
- 11 Phonon-assisted optical absorption in silicon
- 12 Other semiconductors: BAs
- 13 Doped semiconductors: silicon
- 14 Absorption in transparent conducting oxides
- 15 Introduction to Auger-Meitner recombination
- 16 On the naming of Auger-Meitner recombinati
- 17 Auger-Meitner recombination in silicon
- 18 Problems with nitride LEDs
- 19 Ultra-wide-band-gap semiconductors
- 20 Example: deep vs. shallow defects
- 21 Challenges with diamond, cBN: dopants, mob
- 22 Challenges with AlGaN: alloy-disorder scatteri
- 23 Alloy disorder limits the mobility of AlGaN
- 24 Band structure of rutile GeO₂
- 25 Defect calculation method
- 26 Baliga Figure of Merit
- 27 First epitaxial thin films
- 28 Summary and Acknowledgements
- 29 Co-doping acceptors with Hydrogen
