Overview

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Instructor: Prof. Shreepad Karmalkar, Department of Electrical Engineering, IIT Madras.

This course assumes that you have studied solid-state devices covering topics: concentration and transport of carriers in semiconductors, analysis of diodes, BJTs and MOSFETs leading to simple current-voltage equations for these devices. This course shall discuss a qualitative model of semi-classical bulk transport; the electromagnetic field and transport equations of this semi-classical bulk transport; drift-diffusion transport model, equations, boundary conditions, mobility and generation/recombination; the characteristic times and lengths, which are used in device modeling; the energy band diagrams, which is a very important tool both for representing conditions in a device and for analyzing conditions in a device; the 9 steps of deriving a device model; modeling of the MOSFET; structure and characteristics and qualitative understanding of the operation of a MOSFET.

Syllabus

Mod-01 Lec-01 Introduction.
Mod-0 Lec-01 Motivation, Contents and Learning outcomes.
Mod-02 Lec-01 Qualitative model of transport.
Mod-02 Lec-02 Qualitative model of transport.
Mod-02 Lec-03 Qualitative model of transport.
Mod-02 Lec-04 Qualitative model of transport.
Mod-02 Lec-05 Qualitative model of transport.
Mod-03 Lec-01 EM field and transport equations.
Mod-03 Lec-02 EM field and transport equations.
Mod-03 Lec-03 EM field and transport equations.
Mod-03 Lec-04 EM field and transport equations.
Lecture 12.
Mod-03 Lec-06 EM field and transport equations.
Mod-03 Lec-07 EM field and transport equations.
Mod-03 Lec-08 Semi-classical Bulk Transport -- EM field and Transport Equations.
Mod-04 Lec-01 Drift-diffusion transport model.
Mod-04 Lec-02 Drift-diffusion transport model.
Mod-04 Lec-03 Drift-diffusion transport model.
Lecture 19.
Mod-04 Lec-05 Drift-diffusion transport model.
Mod-05 Lec-01 Characteristic times and lengths.
Mod-05 Lec-02 Characteristic times and lengths.
Mod-05 Lec-03 Characteristic times and lengths.
Mod-05 Lec-04 Characteristic times and lengths.
Lecture 25.
Mod-05 Lec-06 Characteristic times and lengths.
Mod-06 Lec-01 Energy band diagrams.
Mod-06 Lec-02 Energy band diagrams.
Mod-06 Lec-03 Energy band diagrams.
Mod-06 Lec-04 Energy band diagrams.
Mod-06 Lec-05 Energy band diagrams.
Mod-06 Lec-06 Energy band diagrams.
Mod-06 Lec-07 Energy band diagrams.
Mod-07 Lec-01 SQEBASTIP -- nine steps of model derivation.
Mod-07 Lec-02 SQEBASTIP -- nine steps of model derivation.
Mod-07 Lec-03 SQEBASTIP -- nine steps of model derivation.
Lecture 37.
Mod-08 Lec-02 Types of device models.
Mod-09 Lec-01 MOSFET : Device Structures and Characteristics.
Mod-09 Lec-02 MOSFET : Device Structures and Characteristics.
Mod-10 Lec-01 DC Model of a Large Uniformly Doped Bulk MOSFET: Qualitative Theory.
Mod-10 Lec-02 DC Model of a Large Uniformly Doped Bulk MOSFET: Qualitative Theory.
Mod-10 Lec-03 DC Model of a Large Uniformly Doped Bulk MOSFET: Qualitative Theory.
Mod-10 Lec-04 DC Model of a Large Uniformly Doped Bulk MOSFET: Qualitative Theory.
Mod-10 Lec-05 DC Model of a Large Uniformly Doped Bulk MOSFET: Qualitative Theory.
Mod-10 Lec-06 DC Model of a Large Uniformly Doped Bulk MOSFET: Qualitative Theory.