ABOUT THE COURSE: The RF Transceiver design course offers comprehensive training on the principles and techniques involved in designing and implementing high-performance radio frequency Transceiver. Students in this course will gain a deep understanding of RF transceiver architecture, including components such as amplifiers, LNA, power amplifier, mixers, oscillator, VCO, introduction to PLL and synthesizer, and their integration into a complete system. The course covers topics like noise analysis, linearity, sensitivity, and dynamic range, equipping students with the knowledge to optimize transceiver performance. By the end of the course, students will be equipped with the skills necessary to design RF transceiver for various applications, including wireless communication systems, radar systems, and satellite transceivers.INTENDED AUDIENCE: The course is typically designed for students or professionals with a background in electrical engineering, electronics engineering, RF engineering, Communication system design, VLSI Design or a related field.PREREQUISITES: Analog circuit design, Electromagnetic Theory, Signals and SystemINDUSTRY SUPPORT: All semiconductor industries such as Intel Corporation, Global Foundry, Qualcomm Inc, Micron, NXP semiconductor, ISRO, DRDO, BEL, etc.
Overview
Syllabus
Week 1: Introduction to Wireless Systems: Classification of wireless systems; Design and performance issues: Choice of operating frequency, multiple access and duplexing, circuit switching versus packet switching, propagation, radiated power and safety; Cellular telephone systems and standards.
Week 2: Noise in RF integrated Systems: Basic threshold detection, noise temperature and noise figure, noise figure of a lossy transmission line; Noise figure of cascade systems: Noise figure of passive networks, two-port networks, Noise in Active components: CMOS/ BiCMOS,
Week 3: Distortion in Receiver Design: Linearity, Intermodulation, Dynamic Range, Sensitivity of the receiver, Spurious Free Dynamic Range (SFDR).
Week 4: Receiver Architecture such as heterodyne, homodyne, Hartley, Weaver, advanced receiver architecture etc.,
Week 5: Active Device: Comparison of active devices such as BJT, MOSFET, MESFET, HEMT, and HBT; Circuit models for FETs and BJTs; Basic parameters of active devices such as ft/fmax, transconductance, capacitance, resistance, etc.
Week 6: Passive Components and Impedance Matching: On-chip Inductor, capacitor, resistor, resonant circuit and its application in RF IC. Various impedance matching techniques.
Week 7: Amplifier Design: Transistor Theory, Transistor S-parameters, gain & Stability, Unilateral and bilateral design, low noise amplifier (LNA Design)
Week 8: Various LNA topologies: CS/CE stage with inductive load, CS/CE stage with resistive feedbac, CG/CB topologies, noise cancellation techniques, differential LNA, Broad band amplifier design, Biasing in RF & microwave circuits
Week 9: Mixers: Mixer characteristics: Image frequency, conversion loss, noise figure; Devices for mixers: p-n junctions, Schottky barrier diode, FETs; Diode mixers: Small-signal characteristics of diode, single-ended mixer, large-signal model, switching model; FET/MOSFET Mixers: Single-ended mixer, other FET mixers; Balanced mixers; Image reject mixers.(cont)
Week 10: Mixers: Mixer characteristics: Image frequency, conversion loss, noise figure; Devices for mixers: p-n junctions, Schottky barrier diode, FETs; Diode mixers: Small-signal characteristics of diode, single-ended mixer, large-signal model, switching model; FET/MOSFET Mixers: Single-ended mixer, other FET mixers; Balanced mixers; Image reject mixers.
Week 11: Oscillators and Frequency Synthesizers: General analysis of RF oscillators, transistor oscillators, voltage-controlled oscillators, dielectric resonator oscillators, frequency synthesis methods, analysis of first and second order phase-locked loop, oscillator noise and its effect on receiver performance.(cont)
Week 12: Oscillators and Frequency Synthesizers: General analysis of RF oscillators, transistor oscillators, voltage-controlled oscillators, dielectric resonator oscillators, frequency synthesis methods, analysis of first and second order phase-locked loop, oscillator noise and its effect on receiver performance.
Week 2: Noise in RF integrated Systems: Basic threshold detection, noise temperature and noise figure, noise figure of a lossy transmission line; Noise figure of cascade systems: Noise figure of passive networks, two-port networks, Noise in Active components: CMOS/ BiCMOS,
Week 3: Distortion in Receiver Design: Linearity, Intermodulation, Dynamic Range, Sensitivity of the receiver, Spurious Free Dynamic Range (SFDR).
Week 4: Receiver Architecture such as heterodyne, homodyne, Hartley, Weaver, advanced receiver architecture etc.,
Week 5: Active Device: Comparison of active devices such as BJT, MOSFET, MESFET, HEMT, and HBT; Circuit models for FETs and BJTs; Basic parameters of active devices such as ft/fmax, transconductance, capacitance, resistance, etc.
Week 6: Passive Components and Impedance Matching: On-chip Inductor, capacitor, resistor, resonant circuit and its application in RF IC. Various impedance matching techniques.
Week 7: Amplifier Design: Transistor Theory, Transistor S-parameters, gain & Stability, Unilateral and bilateral design, low noise amplifier (LNA Design)
Week 8: Various LNA topologies: CS/CE stage with inductive load, CS/CE stage with resistive feedbac, CG/CB topologies, noise cancellation techniques, differential LNA, Broad band amplifier design, Biasing in RF & microwave circuits
Week 9: Mixers: Mixer characteristics: Image frequency, conversion loss, noise figure; Devices for mixers: p-n junctions, Schottky barrier diode, FETs; Diode mixers: Small-signal characteristics of diode, single-ended mixer, large-signal model, switching model; FET/MOSFET Mixers: Single-ended mixer, other FET mixers; Balanced mixers; Image reject mixers.(cont)
Week 10: Mixers: Mixer characteristics: Image frequency, conversion loss, noise figure; Devices for mixers: p-n junctions, Schottky barrier diode, FETs; Diode mixers: Small-signal characteristics of diode, single-ended mixer, large-signal model, switching model; FET/MOSFET Mixers: Single-ended mixer, other FET mixers; Balanced mixers; Image reject mixers.
Week 11: Oscillators and Frequency Synthesizers: General analysis of RF oscillators, transistor oscillators, voltage-controlled oscillators, dielectric resonator oscillators, frequency synthesis methods, analysis of first and second order phase-locked loop, oscillator noise and its effect on receiver performance.(cont)
Week 12: Oscillators and Frequency Synthesizers: General analysis of RF oscillators, transistor oscillators, voltage-controlled oscillators, dielectric resonator oscillators, frequency synthesis methods, analysis of first and second order phase-locked loop, oscillator noise and its effect on receiver performance.
Taught by
Prof. Darshak Bhatt
