Electron and ion beams are widely used for both qualitative and quantitative analysis of semiconductor materials and devices. They can be used to image structures with sub-nm resolution and to provide information about elemental composition and dopant concentration. This course describes the fundamentals of electron and ion beam characterization and includes a project that analyzes the surface roughness of a solar cell.
Overview
Syllabus
- Course Introduction
- Electron and ion beams are widely used for both qualitative and quantitative analysis of semiconductor materials and devices. They can be used to image structures with sub-nm resolution and to provide information about elemental composition and dopant concentration. This course describes the fundamentals of electron and ion beam characterization and includes a project that analyzes the surface roughness of a solar cell.
- Week 4.1: Scanning Electron Microscopy
- This week introduces the concepts of scanning electron microscopy and how it is used for both qualitative and quantitative sample analysis.
- Week 4.2: Auger Electron Spectroscopy
- This week, you will learn about Auger electron emission spectroscopy, a powerful technique for surface analysis.
- Week 4.3: Secondary Ion Mass Spectroscopy
- This week, you will learn about secondary ion mass spectroscopy and how it is used to measure the concentration and distribution of constituent materials in semiconductors.
- Week 4.4: Course Wrap-up and Project
- This week, you will complete a case study to assess your ability to use images obtained from an SEM for quantitative surface analysis.
Taught by
Trevor Thornton and Craig Smith
